Molecular-dynamics analysis of interfacial diffusion between high-permittivity gate dielectrics and silicon substrates

Journal of Materials Research

Volumn 19, Issue 4, 2004, Pages 1197-1202

  Iwasaki, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; DIELECTRIC MATERIALS; DIFFUSION; EQUATIONS OF MOTION; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); MOLECULAR DYNAMICS; POTENTIAL ENERGY; SEMICONDUCTING SILICON; TITANIUM; ULSI CIRCUITS; ZIRCONIA;

HIGH PERMITTIVITY GATE DIELECTRICS; INTERFACIAL OXYGEN DIFFUSION; MANY BODY INTERACTIONS; MOLECULAR DYNAMICS ANALYSIS; SILICON SUBSTRATES;

OXYGEN;

EID: 2342504498     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2004.0155     Document Type: Article

References (14)

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