Molecular-dynamics study of interfacial diffusion between high-permittivity gate dielectrics and germanium substrates

Journal of Materials Research

Volumn 20, Issue 5, 2005, Pages 1300-1307

  Iwasaki, Tomio ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ORIENTATION; DIELECTRIC MATERIALS; DIFFUSION; MOLECULAR DYNAMICS; OXYGEN; PERMITTIVITY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; YTTRIUM;

GERMANIUM SUBSTRATES; HIGH-PERMITTIVITY GATE DIELECTRICS; INTERFACIAL LAYERS; INTERFACIAL OXYGEN DIFFUSION; MOLECULAR-DYNAMICS TECHNIQUE; OXYGEN-DIFFUSION COEFFICIENT;

GERMANIUM;

EID: 29044433798     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2005.0158     Document Type: Article

References (20)

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