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Volumn 39, Issue 3, 1996, Pages 313-320

Using an extended Tersoff interatomic potential to analyze the static-fatigue strength of SiO2 under atmospheric influence

Author keywords

Atmospheric Influence; Computational Mechanics; Crack Propagation; Interatomic Potential; Molecular Dynamics; Silicon Oxide; Static Fatigue

Indexed keywords

CALCULATIONS; CHARGE TRANSFER; CHEMICAL BONDS; COMPUTATIONAL METHODS; CRACK PROPAGATION; CRYSTAL ATOMIC STRUCTURE; FATIGUE OF MATERIALS; MOLECULAR DYNAMICS; PLASTIC DEFORMATION; SILICA; STRENGTH OF MATERIALS; WATER;

EID: 0030186143     PISSN: 13408046     EISSN: None     Source Type: Journal    
DOI: 10.1299/jsmea1993.39.3_313     Document Type: Article
Times cited : (92)

References (16)
  • 9
    • 27544458028 scopus 로고
    • Fundamentals, Section II, Maruzen
    • Japan Chemical Society, Chemical Handbook (in Japanese), Fundamentals, Section II, (1966), p. 819, Maruzen.
    • (1966) Chemical Handbook (in Japanese) , pp. 819
  • 10
    • 3743055486 scopus 로고
    • Chap. IV, Interscience Publishers Inc.
    • Wyckoff, R.W.G., Crystal Structures, 1 (1948), Chap. IV, p. 25, Interscience Publishers Inc.
    • (1948) Crystal Structures , vol.1 , pp. 25
    • Wyckoff, R.W.G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.