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Volumn 39, Issue 3, 1996, Pages 313-320
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Using an extended Tersoff interatomic potential to analyze the static-fatigue strength of SiO2 under atmospheric influence
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HITACHI LTD
(Japan)
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Author keywords
Atmospheric Influence; Computational Mechanics; Crack Propagation; Interatomic Potential; Molecular Dynamics; Silicon Oxide; Static Fatigue
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Indexed keywords
CALCULATIONS;
CHARGE TRANSFER;
CHEMICAL BONDS;
COMPUTATIONAL METHODS;
CRACK PROPAGATION;
CRYSTAL ATOMIC STRUCTURE;
FATIGUE OF MATERIALS;
MOLECULAR DYNAMICS;
PLASTIC DEFORMATION;
SILICA;
STRENGTH OF MATERIALS;
WATER;
ATMOSPHERIC INFLUENCE;
CHARGE TRANSFER EFFECTS;
COMPUTATIONAL MECHANICS;
FORCE ELONGATION CURVES;
INTERATOMIC BONDS;
STATIC FATIGUE STRENGTH;
STRENGTH DEGRADATION BEHAVIOR;
TERSOFF INTERATOMIC POTENTIAL;
FRACTURE MECHANICS;
CRACK PROPAGATION;
FATIGUE;
SILICA;
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EID: 0030186143
PISSN: 13408046
EISSN: None
Source Type: Journal
DOI: 10.1299/jsmea1993.39.3_313 Document Type: Article |
Times cited : (92)
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References (16)
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