Silicon potentials under (ion) attack: Towards a new MEAM model

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 228, Issue 1-4 SPEC. ISS., 2005, Pages 198-211

  Thijsse, Barend J ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

DFT; MEAM; Molecular dynamics; Potential; Silicon; Sputtering

Indexed keywords

DENSITY FUNCTIONAL THEORY (DFT); ION ATTACK; MODIFIED EMBEDDING ATOM METHOD POTENTIAL (MEAM); SILICON POTENTIALS;

COMPUTER SIMULATION; ELASTIC MODULI; HIGH ENERGY PHYSICS; IONIZATION; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; PROBABILITY DENSITY FUNCTION; SILICON; SPUTTER DEPOSITION;

TARGETS;

EID: 11344292040     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.10.045     Document Type: Conference Paper

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