Interface defect-assisted single electron charging (and discharging) dynamics in Ge nanocrystals memories

Applied Physics Letters

Volumn 97, Issue 1, 2010, Pages

  De Sousa, J S ^a   Peibst, R ^b,c   Farias, G A ^a   Leburton, J P ^d   Hofmann, K R ^b  

^a FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^c INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^d University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISCHARGING PROCESS; GE NANOCRYSTALS; INTERFACE DEFECTS; NANOCRYSTAL STATE; NANOCRYSTAL SURFACE; QUANTUM MECHANICAL MODEL; SINGLE-ELECTRON CHARGING; SPATIAL DISTRIBUTION; TRANSITION RATES; TUNNELING OXIDES;

DISTRIBUTION FUNCTIONS; ELECTRONS; GERMANIUM; QUANTUM THEORY; SEMICONDUCTOR STORAGE; SIZE DISTRIBUTION; SURFACE DEFECTS;

NANOCRYSTALS;

EID: 77954712254     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3455899     Document Type: Article

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