Electron programing and hole erasing in silicon nanocrystal Flash memories with fin field-effect transistor architecture

Applied Physics Letters

Volumn 92, Issue 20, 2008, Pages

  Corso, D ^a   Mur G ^a   Lombardo, S ^a   Cina G ^b,c   Tripiciano, E ^b,c   Gerardi, C ^b,c   Rimini, E ^a  

^a CNR IMM   (Italy)

^b STMICROELECTRONICS   (Italy)

^c Numonyx   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CAPACITY; ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; HIGH TEMPERATURE EFFECTS; NANOCRYSTALLINE SILICON;

ELECTRON PROGRAMING; FIELD-EFFECT TRANSISTOR ARCHITECTURE; HOLE ERASING;

FLASH MEMORY;

EID: 44349124488     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2920204     Document Type: Article

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