Driving mechanisms for the formation of nanocrystals by annealing of ultrathin Ge layers in SiO2

Physical Review B - Condensed Matter and Materials Physics

Volumn 79, Issue 19, 2009, Pages

  Peibst, R ^a   Durkop T ^a   Bugiel, E ^a   Fissel, A ^a   Costina, I ^b   Hofmann, K R ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 67649124891     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.195316     Document Type: Article

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