Modeling of retention characteristics for metal and semiconductor nanocrystal memories

Solid-State Electronics

Volumn 51, Issue 5, 2007, Pages 806-811

  Guan, Weihua ^a   Long, Shibing ^a   Liu, Ming ^a   Liu, Qi ^a   Hu, Yuan ^a   Li, Zhigang ^a   Jia, Rui ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

Device modeling; Nanocrystal memory; Quantum confinement; Retention characteristic

Indexed keywords

COMPUTER SIMULATION; DIELECTRIC MATERIALS; MATHEMATICAL MODELS; QUANTUM CONFINEMENT;

DEVICE MODELING; METAL NANOCRYSTALS (MNC); NANOCRYSTAL MEMORY; RETENTION CHARACTERISTICS;

NANOCRYSTALS;

EID: 34248644583     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.03.017     Document Type: Article

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