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Volumn 20, Issue 15, 2009, Pages
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Quantum dot networks in dielectric media: From compact modeling of transport to the origin of field effect luminescence
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Author keywords
[No Author keywords available]
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Indexed keywords
ABSORPTION CROSS SECTIONS;
CAPACITANCE MATRIXES;
CHARGE FLUXES;
COMPACT MODELING;
COMPACT MODELS;
CONFINED EXCITONS;
DIELECTRIC MATRIXES;
DIELECTRIC MEDIAS;
EFFECTIVE AREAS;
ELECTRICAL EXCITATIONS;
EXPERIMENTAL DATUM;
FIELD EFFECTS;
HOLE TUNNELING;
IMPACT EXCITATIONS;
MODEL OF TRANSPORTS;
NON-VOLATILE MEMORIES;
POTENTIAL BARRIER HEIGHTS;
QUANTUM DOTS;
RANDOM DISTRIBUTIONS;
RATE EQUATIONS;
SEQUENTIAL INJECTIONS;
SILICON NANOCRYSTALS;
SYSTEM OF NONLINEAR DIFFERENTIAL EQUATIONS;
TIME-DEPENDENT VOLTAGES;
TUNNELING CURRENTS;
TUNNELING TIME;
UNDER PULSED EXCITATIONS;
WKB APPROXIMATIONS;
APPROXIMATION THEORY;
EXCITONS;
LIGHT;
LUMINESCENCE;
NANOCRYSTALS;
NONLINEAR EQUATIONS;
OPTICAL WAVEGUIDES;
SCHRODINGER EQUATION;
SEMICONDUCTING SILICON;
SEMICONDUCTOR QUANTUM DOTS;
TRANSPORT PROPERTIES;
TUNNEL JUNCTIONS;
TUNNELING (EXCAVATION);
QUANTUM CHEMISTRY;
NANOCRYSTAL;
QUANTUM DOT;
SILICON;
ARTICLE;
DIELECTRIC CONSTANT;
ELECTRIC CAPACITANCE;
ELECTRIC CONDUCTIVITY;
ELECTRIC CURRENT;
ELECTRODE;
ELECTRON;
LUMINESCENCE;
MATHEMATICAL MODEL;
PRIORITY JOURNAL;
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EID: 65549157069
PISSN: 09574484
EISSN: 13616528
Source Type: Journal
DOI: 10.1088/0957-4484/20/15/155201 Document Type: Article |
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Times cited : (14)
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References (32)
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