Light-induced programming of Si nanocrystal flash memories

Applied Physics Letters

Volumn 92, Issue 10, 2008, Pages

  De Sousa, J S ^a   Farias, G A ^a   Leburton, J P ^b  

^a FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CHARGE TRANSFER; NANOCRYSTALLINE SILICON; NANOCRYSTALS; POISSON EQUATION; SUBSTRATES;

LIGHT-INDUCED PROGRAMMING; NANOCRYSTAL FLASH MEMORY DEVICES; VOLTAGE-INDUCED PROGRAMMING;

FLASH MEMORY;

EID: 40849120046     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2839326     Document Type: Article

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