PE-CVD fabrication of germanium nanoclusters for memory applications

Materials Science and Engineering: B

Volumn 147, Issue 2-3, 2008, Pages 213-217

  Durkop T ^a   Bugiel, E ^a   Costina, I ^b   Ott, A ^a   Peibst, R ^a   Hofmann, K R ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b IHP   (Germany)

Author keywords

Annealing; Chemical vapor deposition; Germanium; Metal insulator semiconductor structures; Semiconductor devices

Indexed keywords

ANNEALING; GERMANIUM; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR STORAGE; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING TEMPERATURE; CLUSTER FORMATION; DEPOSITION CHAMBERS;

NANOCLUSTERS;

EID: 38749143322     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2007.08.022     Document Type: Article

References (17)

1. Tiwari S., Rana F., Hanafi H., Hartstein A., Crabbe E.F., and Chan K. Appl. Phys. Lett. 68 10 (1996) 1377-1379
2. Grom G.F., Lockwood D.J., McCaffrey J.P., Labbe H.J., Fauchet P.M., White B., Diener J., Kovalev D., Koch F., and Tsybeskov L. Nature 407 6802 (2000) 358-361
3. Heitmann J., Müller F., Zacharias M., and Gösele U. Adv. Mater. 17 7 (2005) 795-803
4. Ammendola G., Ancarani V., Triolo V., Bileci M., Corso D., Crupi I., Perniola L., Gerardi C., Lombardo S., and DeSalvo B. Solid-State Electron. 48 9 (2004) 1483-1488
5. Ng C., Chen T., Sreeduth D., Chen Q., Ding L., and Du A. Thin Solid Films 504 1-2 (2006) 25-27
6. R. Muralidhar, R.F. Steimle, M. Sadd, R. Rao, C.T. Swift, E.J. Prinz, J. Yater, L. Grieve, K. Harber, B. Hradsky, S. Straub, B. Acred, W. Paulson, W. Chen, L. Parker, S.G.H. Anderson, M. Rossow, T. Merchant, M. Paransky, T. Huynh, D. Hadad, K.M. Chang, B.E. White Jr., IEEE International Electron Devices Meeting (IEDM) 2003. Technical Digest (2003), pp. 601-604.
7. Maeda Y. Phys. Rev. B 51 3 (1995) 1658-1670
8. Niu X., and Dalal V.L. J. Appl. Phys. 98 9 (2005) 096103
9. Ortiz M.I., Rodríguez A., Sangrador J., Rodríguez T., Avella M., Jiménez J., and Ballesteros C. Nanotechnology 16 5 (2005) 197-201
10. Perez A.M., Zuniga C., Renero F.J., and Torres A. Opt. Eng. 44 4 (2005) 043801
11. Lombardo S., and Campisano S.U. Mater. Sci. Eng. R 17 8 (1996) 281-336
12. Choi W.K., Ng V., Ng S.P., Thio H.H., Shen Z.X., and Li W.S. J. Appl. Phys. 86 3 (1999) 1398-1403
13. Zacharias M., and Streitenberger P. Phys. Rev. B 62 12 (2000) 8391-8396
14. Williams G.V.M., Bittar A., and Trodahl H.J. J. Appl. Phys. 67 4 (1990) 1874-1878
15. Xu Q., Sharp I.D., Yuan C.W., Yi D.O., Liao C.Y., Glaeser A.M., Minor A.M., Beeman J.W., Ridgway M.C., Kluth P., Ager J.W., Chrzan D.C., and Haller III E.E. Phys. Rev. Lett. 97 15 (2006) 155701
16. Fukuda H., Sakuma S., Yamada T., Nomura S., Nishino M., Higuchi T., and Ohshima S. J. Appl. Phys. 90 7 (2001) 3524-3528
17. Kanoun M., Busseret C., Poncet A., Souifi A., Baron T., and Gautier E. Solid State Electron. 50 7-8 (2006) 1310-1314