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Volumn 21, Issue 29, 2010, Pages

Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers

Author keywords

[No Author keywords available]

Indexed keywords

AU NANOPARTICLE; GERMANIUM NANOWIRES; HIGH-TEMPERATURE PROCESSING; HOMOEPITAXIAL; LOW TEMPERATURES; NANOWIRE GROWTH; PROCESS WINDOW; RAPID OXIDATION; ROOT MEAN SQUARE ROUGHNESS; SEEDING TECHNIQUES; SI(111) SUBSTRATE; SI-BASED MICROELECTRONICS; SILICON SUBSTRATES; VAPOR-LIQUID-SOLID GROWTH MECHANISM;

EID: 77954414047     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/29/295602     Document Type: Article
Times cited : (10)

References (38)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.