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Journal of Materials Chemistry

Volumn 18, Issue 44, 2008, Pages 5376-5381

Growth of branching Si nanowires seeded by Au-Si surface migration

(4) Doerk, Gregory S a Ferralis, Nicola a Carraro, Carlo a Maboudian, Roya a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC WIRE; EPITAXIAL GROWTH; HYDROGEN; MATERIALS PROPERTIES; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SCANNING; SILICON;

BRANCH LENGTHS; CONFOCAL RAMAN; CRYSTALLINE SI; EUTECTIC LIQUIDS; GROWTH DIRECTIONS; HIERARCHICAL NANOSTRUCTURES; HIGH CRYSTALLINITY; INDEPENDENT CONTROLS; INTERMEDIATE ANNEALING; MICROSCOPIC MAPS; SCANNING ELECTRON MICROGRAPHS; SI NANOWIRES; SI SURFACES; SILICON NANOWIRES; SYNTHESIS OF; TO MANY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 55349130316 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/b811535d Document Type: Article

Times cited : (54)

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