Interface and electrical properties of La-silicate for direct contact of high-k with silicon

Solid-State Electronics

Volumn 54, Issue 7, 2010, Pages 715-719

  Kakushima, K ^a   Tachi, K ^a   Adachi, M ^a   Okamoto, K ^a   Sato, S ^a   Song, J ^a   Kawanago, T ^a   Ahmet, P ^a   Tsutsui, K ^a   Sugii, N ^a   Hattori, T ^a   Iwai, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Effective mobility; High k gate dielectric; Rare earth oxide; Silicate; X ray photoelectron spectroscopy

Indexed keywords

CHEMICAL BONDING STATE; COULOMB SCATTERING; DIRECT CONTACT; EFFECTIVE MOBILITIES; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; EQUIVALENT OXIDE THICKNESS; FLAT-BAND VOLTAGE; GATE ELECTRODES; HIGH-K GATE DIELECTRICS; INDUCED DEFECTS; INTERFACE PROPERTY; INTERFACIAL LAYER; INTERFACIAL STATE DENSITY; LOW TEMPERATURE ANNEALING; METAL ATOMS; MOBILITY ANALYSIS; MOBILITY DEGRADATION; NEGATIVE SHIFT; RARE EARTH OXIDE; SI SUBSTRATES; SILICATE LAYERS; SUBTHRESHOLD SLOPE; TRANSISTOR OPERATION; TRANSITION LAYERS;

CHEMICAL BONDS; DIELECTRIC DEVICES; GATES (TRANSISTOR); LANTHANUM; PHOTODEGRADATION; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; RARE EARTHS; SILICATES; SILICON OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE DIELECTRICS;

EID: 77954185965     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.03.005     Document Type: Article

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