Ultra-thin (EOT=3Å) and low leakage dielectrics of La-alminate directly on Si substrate fabricated by high temperature deposition

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 433-436

  Suzuki, Masamichi ^a   Tomita, Mitsuhiro ^a   Yamaguchi, Takeshi ^a   Fukushima, Noburu ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DIFFUSION; INTERFACES (MATERIALS); LANTHANUM COMPOUNDS; SILICON; SUBSTRATES;

HIGH TEMPERATURE DEPOSITION; INTERFACE LAYER FORMATION; OXYGEN EXCHANGE;

GATE DIELECTRICS;

EID: 33748987198     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. Ai-Dong Li et al., Appl. Phys. Lett., 83 (2004)p3540.
2. X.-B. Lu et al., J. Appl. Phys., 94(2003)p1229.
3. K J. Yang et al., IEEE Trans. Electron Devices, 46(1999)p1500.
4. N. Yasuda, T. Yamaguchi, Y. Nishikawa, H. Satake and N. Fukushima, Ext.Abstr. IWGI, 2001, p212.
5. L. F. Edge et al., Appl. Phys. Lett., 84(2004)p726.
6. S. De Gendt et al., Ext.Abstr. IWGI, 2003, p. 10.
7. M. Koike et al., IEDM Tech.Dig, 2003, p107.
8. Mark I. Gardner et al., Ext.Abstr. IWGI, 2003, p.170.
9. S. J. Lee et al., IEDM Tech. Dig., 2000, p.31.
10. C. Choi et al., Symp. VLSI Tech., 2005, p226.
11. S. Takagi, A. Toriumi, M. Iwase and H. Tango IEEE Trans. Electron Devices, 41(1994)p.2357.