Clarification of additional mobility components associated with TaC and TiN metal gates in scaled HfSiON MOSFETs down to sub-1.0nm EOT

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 349-352

  Tatsumura, Kosuke ^a   Goto, Masakazu ^b   Kawanaka, Shigeru ^b   Nakajima, Kazuaki ^c   Schimizu, Tatsuo ^a   Ishihara, Takamitsu ^a   Koyama, Masato ^a  

^a SoC Research and Development Center   (Japan)

^b Semiconductor Company   (Japan)

^c TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CLARIFICATION; ELECTRON DEVICES; HAFNIUM COMPOUNDS; METALS; MOSFET DEVICES; TIN; TITANIUM NITRIDE;

LIMITING FACTORS; METAL GATES; MOSFETS;

TITANIUM COMPOUNDS;

EID: 50249109539     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418943     Document Type: Conference Paper

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