Overview of materials processing and properties of lanthanum-based high-K dielectrics

ECS Transactions

Volumn 11, Issue 4, 2007, Pages 319-332

  Lichtenwalner, D J ^a   Jur, J S ^a   Inoue, N ^b   Kingon, A I ^a  

^a North Carolina State University   (United States)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; GATE DIELECTRICS; HAFNIUM COMPOUNDS; HIGH-K DIELECTRIC; LANTHANUM OXIDES; LOGIC GATES; MIS DEVICES; MOSFET DEVICES; SILICATES; SILICON; TEMPERATURE; THRESHOLD VOLTAGE;

CROSS-SECTIONAL TEM; GATE DIELECTRIC APPLICATIONS; HAFNIUM BASED DIELECTRICS; LANTHANUM ADDITIONS; LANTHANUM SILICATES; LOW TEMPERATURE PROCESSING; MATERIALS PROCESSING; MOBILITY DEGRADATION;

DIELECTRIC MATERIALS;

EID: 45149147285     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2779571     Document Type: Conference Paper

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