Physico-chemical, structural and physical properties of hydrogenated silicon oxinitride films elaborated by pulsed radiofrequency discharge

Thin Solid Films

Volumn 518, Issue 15, 2010, Pages 4142-4149

  Bedjaoui, M ^a   Despax, B ^a  

^a Laboratoire Plasma et Conversion d'Energie   (France)

Author keywords

Hydrogenated silicon oxynitride; Infrared spectroscopy; Pulsed plasma enhanced chemical vapor; Raman spectroscopy; Rutherford backscattering spectroscopy; Silicon nanocrystals; Spectroscopic ellipsometry; Transmission electron microscopy

Indexed keywords

CHEMICAL VAPOR; HYDROGENATED SILICON; HYDROGENATED SILICON OXYNITRIDE; PULSED PLASMA; SILICON NANOCRYSTALS;

ANNEALING; BACKSCATTERING; ELECTRIC DISCHARGES; HYDROGENATION; INFRARED SPECTROSCOPY; NANOCRYSTALS; NITROGEN OXIDES; PLASMA DEPOSITION; PLASMA DIAGNOSTICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON NITRIDE; SILICON OXIDES; SPECTROSCOPIC ELLIPSOMETRY; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

AMORPHOUS SILICON;

EID: 77953296842     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.11.068     Document Type: Article

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