Structural properties of SiO2 films prepared by plasma-enhanced chemical vapor deposition

Materials Science in Semiconductor Processing

Volumn 4, Issue 1-3, 2001, Pages 43-46

  Iacona, Fabio ^a   Ceriola, Giulio ^a   La Via, Francesco ^a  

^a CNR IMETEM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

FILM PREPARATION; INFRARED SPECTROSCOPY; NITROGEN OXIDES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICA; THIN FILMS;

FULL WIDTH AT HALF MAXIMUM (FWHM);

SEMICONDUCTING FILMS;

EID: 0035246952     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00130-X     Document Type: Article

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