Auger quenching-based modulation of electroluminescence from ion-implanted silicon nanocrystals

Nanotechnology

Volumn 19, Issue 20, 2008, Pages

  Carreras, Josep ^a   Bonafos, C ^b   Montserrat, J ^c   Dominguez C ^c   Arbiol, J ^a   Garrido, B ^a  

^a UNIVERSITY OF BARCELONA   (Spain)

^b CEMES CNRS   (France)

^c INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER QUENCHING; GATE EXCITATION; THICK GATE OXIDES;

AUGER ELECTRON SPECTROSCOPY; ELECTROLUMINESCENCE; FREQUENCY RESPONSE; GATE DIELECTRICS; ION IMPLANTATION; QUENCHING;

NANOCRYSTALLINE SILICON;

ERBIUM; NANOCRYSTAL; OXIDE; SILICON; SILICON OXIDE; SOLVENT; UNCLASSIFIED DRUG;

ARTICLE; AUGER QUENCHING; BIOSENSOR; DISPERSION; ELECTRIC POTENTIAL; ELECTRICITY; ELECTRON; FIELD EFFECT TRANSISTOR; FOWLER NORDHEIM GATE EXCITATION; FREQUENCY MODULATION; LIGHT; LUMINESCENCE; PRIORITY JOURNAL;

EID: 42449136235     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/20/205201     Document Type: Article

References (27)

1. Hanafi H, Tiwari S and Khan I 1996 IEEE Trans. Electron Devices 43 1553
2. Irrera A et al 2006 Nanotechnology 17 1428-36
3. Jambois O, Garrido B, Pellegrino P, Carreras J, Pérez- Rodríguez A, Montserrat J, Bonafos C, BenAssayag G and Schamm S 2006 Appl. Phys. Lett. 89 253124
4. Skorupa W, Rebohle L and Gebel T 2003 Appl. Phys. A 76 1049-59
5. Valenta J, Lalic N and Linnros J 2004 Appl. Phys. Lett. 84 1459-61
6. Mangolini L, Thimsen E and Kortshagen U 2005 Nano Lett. 5 655
7. Ding L, Chen T P, Liu Y, Yang M, Wong J I, Liu K Y, Zhu F R and Fung S 2007 Nanotechnology 18 455306
8. Pavesi L, Dal Negro L, Mazzoleni C, Franzò G and Priolo F 2000 Nature 408 440-4
9. Liu A, Jones R, Liao L, Samara-Rubio D, Rubin D, Cohen O, Nicolaescu R and Paniccia M 2004 Nature 427 615-8
10. Xu Q, Schmidt B, Pradhan S and Lipson M 2005 Nature 435 325-7
11. Gu L, Jiang W, Chen X, Wang L and Chen R T 2007 Appl. Phys. Lett. 90 071105
12. Almeida V R, Xu Q and Lipson M 2005 Opt. Lett. 30 2403-5
13. Jambois O, Carreras J, Pérez-Rodríguez A, Garrido B, Bonafos C, Schamm S and BenAssayag G 2007 Appl. Phys. Lett. 91 211105
14. Walters R J, Carreras J, Feng T, Bell L D and Atwater H A 2006 IEEE J. Sel. Top. Quantum Electron. 12 1647-656
15. Carreras J, Arbiol J, Garrido B, Bonafos C and Montserrat J 2008 Appl. Phys. Lett. 92 091103
16. Ziegler J F, Biersack J P and Littmark U 1985 The Stopping and Range of Ions in Solids (New York: Pergamon)
17. Irrera A, Pacifici D, Miritello M, Franzò G, Priolo F, Iacona F, Sanfilippo D, DiStefano G and Fallica P G 2002 Appl. Phys. Lett. 81 1866-8
18. Ding L, Chen T P, Liu Y, Yang M, Wong J I, Liu Y C, Trigg A D, Zhu F R, Tan M C and Fung S 2007 J. Appl. Phys. 101 103525
19. Linnros J, Lalic N, Galeckas A and Grivickas V 1999 J. Appl. Phys. 86 6128-34
20. Perálvarez M, García C, López M, Garrido B, Barreto J, Domínguez C and Rodríguez J A 2006 Appl. Phys. Lett. 89 051112
21. M'ghaïeth R, Maâref H, Mihalcescu I and Vial J C 1991 Phys. Rev. B 60 4450-3
22. Schaller R D, Agranovich V M and Klimov V 2005 Nat. Phys. 1 189-94
23. Ammendola G, Ancarani V, Triolo V, Bileci M, Corso D, Crupi I, Perniola L, Gerardi C, Lombardo S and DeSalvo B 2004 Solid State Electron. 48 1483-8
24. Gehring A, Grasser T, Kosina H and Selberherr S 2002 J. Appl. Phys. 92 6019-27
25. Lenzlinger M and Snow E H 1969 J. Appl. Phys. 40 278-83
26. Ng C Y, Chen T P, Yang M, Yang J B, Ding L, Li C M, Du A and Trigg A 2006 IEEE Trans. Electron Devices 53 663
27. Lee W C and Hu C 2001 IEEE Trans. Electron Devices 48 1366