Silicon nanocrystal based memory devices for NVM and DRAM applications

Solid-State Electronics

Volumn 48, Issue 9, 2004, Pages 1463-1473

  Rao, R A ^a   Steimle, R F ^a   Sadd, M ^a   Swift, C T ^a   Hradsky, B ^a   Straub, S ^a   Merchant, T ^a   Stoker, M ^a   Anderson, S G H ^a   Rossow, M ^a   Yater, J ^a   Acred, B ^a   Harber, K ^a   Prinz, E J ^a   White Jr , B E ^a   Muralidhar, R ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; DATA STORAGE EQUIPMENT; DYNAMIC RANDOM ACCESS STORAGE; ELECTRON ENERGY LEVELS; GATES (TRANSISTOR); PASSIVATION; SILICON; THIN FILMS; THRESHOLD VOLTAGE;

ELECTROCHEMICAL POTENTIAL CHANGES; NANOCRYSTAL MEMORY DEVICES; NON-VOLATILE MEMORY (NVM); NOR GATES;

NANOSTRUCTURED MATERIALS;

EID: 2942696234     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.03.021     Document Type: Conference Paper

References (19)

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