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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 6, 2009, Pages 990-993

Comparative study of Si precipitation in silicon-rich oxide films

(7) Lebour, Y a Pellegrino, P a Hernandez S a Martinez A a Jordana, E b Fedeli, J M b Garrido, B a

a UNIVERSITY OF BARCELONA (Spain)

b CEA LETI (France)

Author keywords

Chemical vapour deposition; Nanocrystals density; Near infrared emission; Precipitation; Si nanocrystals

Indexed keywords

A DENSITIES; AS-DEPOSITED FILMS; AVERAGE SIZES; CHEMICAL VAPOUR DEPOSITION; COMPARATIVE STUDIES; ELECTRON IMAGES; NEAR-INFRARED EMISSION; NITROGEN CONTENTS; OPTIMUM TEMPERATURES; PHOTO-LUMINESCENCE MEASUREMENTS; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITIONS; PRECIPITATION; SEMICONDUCTOR INDUSTRIES; SI CLUSTERS; SI NANOCLUSTERS; SI NANOCRYSTALS; SI PRECIPITATES; SILICON-RICH OXIDE FILMS; SILICON-RICH OXIDES; THERMAL TREATMENTS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

AMORPHOUS FILMS; ELECTRON OPTICS; EMISSION SPECTROSCOPY; INFRARED DEVICES; NANOCRYSTALS; PHASE SEPARATION; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; SPECTRUM ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

OXIDE FILMS;

EID: 67349083295 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/j.physe.2008.08.041 Document Type: Article

Times cited : (9)

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