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Semiconductor Science and Technology

Volumn 19, Issue 1, 2004, Pages 50-53

Dielectric properties of CVD grown SiON thin films on Si for MOS microelectronic devices

(5) Konofaos, N a Evangelou, E K b,c Aslanoglou, X c Kokkoris, M d Vlastou, R e

a UNIVERSITY OF PATRAS (Greece)

b LABORATORIO MDM (Italy)

c UNIVERSITY OF IOANNINA (Greece)

d INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY (Greece)

e NATIONAL TECHNICAL UNIVERSITY OF ATHENS (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; COMPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; ELECTRIC CONDUCTANCE; METALLIZING; MICROELECTRONICS; MOS DEVICES; NITROGEN; PERMITTIVITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING FILMS; THIN FILMS;

ELECTRIC ADMITTANCE SPECTROSCOPY; TRAPPED CHARGES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0347758349 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/19/1/008 Document Type: Article

Times cited : (32)

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