A methodology for extraction of the density of interface states in the presence of frequency dispersion via the conductance technique

IEEE Transactions on Electron Devices

Volumn 57, Issue 7, 2010, Pages 1642-1650

  Sicre, Sébastien B F ^a   De Souza, Maria Merlyne ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Conductance; High k; interface states; metal gate; small signal analysis

Indexed keywords

COMPLEX NATURE; CONDUCTANCE TECHNIQUES; CONVENTIONAL MODELS; DENSITY OF INTERFACE STATE; ELECTRICAL MODELS; FREQUENCY DISPERSION; INTERFACE STATE; INTERFACE STATE DENSITY; METAL GATE; PARASITIC EFFECT; POLYSILICON GATES; SMALL-SIGNAL ANALYSIS;

DISPERSIONS; HAFNIUM COMPOUNDS; HETEROJUNCTION BIPOLAR TRANSISTORS; METAL RECOVERY; MOS CAPACITORS; POLYSILICON; SIGNAL ANALYSIS; SILICON COMPOUNDS; SMELTING;

GATE DIELECTRICS;

EID: 77954031498     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2049208     Document Type: Article

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