Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitor

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 130-133

  Cheng, Chao Ching ^a   Chien, Chao Hsin ^a,b   Luo, Guang Li ^b   Liu, Jun Cheng ^a   Chen, Yi Cheng ^a   Chang, Yao Feng ^a   Wang, Shin Yuan ^a   Kei, Chi Chung ^c   Hsiao, Chien Nan ^c   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c INSTRUMENT TECHNOLOGY RESEARCH CENTER   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CIRCUIT THEORY; DIELECTRIC DEVICES; MOS CAPACITORS; SMELTING;

ADMITTANCE MEASUREMENTS; CAPACITANCE VOLTAGES; CAPACITOR STRUCTURES; CIRCUIT MODELS; DIFFERENT FREQUENCIES; FREQUENCY DISPERSIONS; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; PARASITIC COMPONENTS; REGRESSION METHODS; SERIES RESISTANCES; VOLTAGE CURVES;

CAPACITANCE;

EID: 59949100371     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3058724     Document Type: Article

References (14)

1. E. M. Vogel, W. K. Henson, C. A. Richter, and J. S. Suehle, IEEE Trans. Electron Devices 47, 601 (2000).
2. W. K. Henson, K. Z. Ahmed, E. M. Vogel, J. R. Hauser, J. J. Wortman, R. D. Venables, M. Xu, and D. Venables, IEEE Electron Device Lett. 20, 179 (1999).
3. C.-H. Choi, Y. Wu, J.-S. Goo, Z. Yu, and R. W. Dutton, IEEE Trans. Electron Devices 47, 1843 (2000).
4. J. Schmitz, F. N. Cubaynes, R. J. Havens, R. D. Kort, A. J. Scholten, and L. F. Tiemeijer, IEEE Electron Device Lett. 24, 37 (2003).
5. Y. Okawa, H. Norimatsu, H. Suto, and M. Takayanagi, IEEE Proceedings of the International Conference on Microelectronic Test Structures (ICMTS), 2003 (unpublished), p. 197.
6. G. A. Brown, IEEE Proceedings of the International Conference on Microelectronic Test Structures (ICMTS), 2005 (unpublished), 213.
7. L. Pantisano, J. Ramos, E. S. A. Serrano, Ph. J. Roussel, W. Sansen, and G. Groeseneken, IEEE Proceedings of the International Conference on Microelectronic Test Structures (ICMTS), 2006 (unpublished), 222.
8. D. K. Schroder, Semiconductor Material and Device Characterization, 2nd ed. (Wiley, New York, 1998).
9. K. J. Yang and C. Hu, IEEE Trans. Electron Devices 46, 1500 (1999).
10. H. T. Lue, C. Y. Liu, and T. Y. Tseng, IEEE Electron Device Lett. 23, 553 (2002).
11. W. H. Wu, B. Y. Tsui, Y. P. Huang, F. C. Hsieh, M. C. Chen, Y. T. Hou, Y. Jin, H. J. Tao, S. C. Chen, and M. S. Liang, IEEE Electron Device Lett. 27, 399 (2006).
12. A. Nara, N. Yasuda, H. Satake, and A. Toriumi, IEEE Trans. Semicond. Manuf. 15, 209 (2002).
13. Z. Luo and T. P. Ma, IEEE Electron Device Lett. 25, 655 (2004).
14. S. H.-M. Jen, C. C. Enz, D. R. Pehlke, M. Schroter, and B. J. Sheu, IEEE Trans. Electron Devices 46, 2217 (1999).