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Volumn 51, Issue 8, 2004, Pages 1350-1352

Elimination of chuck-related parasitics in MOSFET gate capacitance measurements

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRIC IMPEDANCE; EQUIVALENT CIRCUITS; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MODELS; SILICA; VOLTAGE MEASUREMENT;

EID: 3943096001     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.832705     Document Type: Article
Times cited : (8)

References (13)
  • 1
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    • Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
    • May
    • S.-H. Lo, D. A. Buchanan, Y. Taur, and W. Wang, "Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's," IEEE Electron Device Lett., vol. 18, pp. 209-211, May 1997.
    • (1997) IEEE Electron Device Lett. , vol.18 , pp. 209-211
    • Lo, S.-H.1    Buchanan, D.A.2    Taur, Y.3    Wang, W.4
  • 2
    • 0033169532 scopus 로고    scopus 로고
    • Impact of tunnel currents and channel resistance on the characterization of channel inversion layer charge and polysilicon-gate depletion of sub-20 Å gate oxide MOSFET's
    • Aug
    • K. Ahmed, E. Ibok, G. C.-F. Yeap, Q. Xiang, B. Ogle, J. Wortman, and J. Hauser, "Impact of tunnel currents and channel resistance on the characterization of channel inversion layer charge and polysilicon-gate depletion of sub-20 Å gate oxide MOSFET's," IEEE Trans. Electron Devices, vol. 46, pp. 1650-1655, Aug. 1999.
    • (1999) IEEE Trans. Electron Devices , vol.46 , pp. 1650-1655
    • Ahmed, K.1    Ibok, E.2    Yeap, G.C.-F.3    Xiang, Q.4    Ogle, B.5    Wortman, J.6    Hauser, J.7
  • 3
    • 84939383977 scopus 로고
    • 2 interface-electrical properties as determined by the metal-insulator-silicon conductance technique
    • July-Aug
    • 2 interface-electrical properties as determined by the metal-insulator-silicon conductance technique," Bell Syst. Tech. J., vol. 46, no. 6, pp. 1055-1133, July-Aug. 1967.
    • (1967) Bell Syst. Tech. J. , vol.46 , Issue.6 , pp. 1055-1133
    • Nicollian, E.H.1    Goetzberger, A.2
  • 4
    • 0032679052 scopus 로고    scopus 로고
    • MOS capacitance measurements for high-leakage thin dielectrics
    • July
    • K. J. Yang and C. Hu, "MOS capacitance measurements for high-leakage thin dielectrics," IEEE Trans. Electron Devices, vol. 46, pp. 1500-1501, July 1999.
    • (1999) IEEE Trans. Electron Devices , vol.46 , pp. 1500-1501
    • Yang, K.J.1    Hu, C.2
  • 5
    • 0033172194 scopus 로고    scopus 로고
    • Extraction of the capacitance of a metal oxide semiconductor tunnel diode (MOSTD) biased in accumulation
    • Aug
    • M. Matsumura and Y. Hirose, "Extraction of the capacitance of a metal oxide semiconductor tunnel diode (MOSTD) biased in accumulation," Jpn. J. Appl. Phys., vol. 38, pp. L845-L847, Aug. 1999.
    • (1999) Jpn. J. Appl. Phys. , vol.38
    • Matsumura, M.1    Hirose, Y.2
  • 9
    • 0037966281 scopus 로고    scopus 로고
    • The negative capacitance effect on the C-V measurement of ultra thin gate dielectrics induced by the stray capacitance of the measurement system
    • Y. Okawa, H. Norimatsu, H. Suto, and M. Takayanagi, "The negative capacitance effect on the C-V measurement of ultra thin gate dielectrics induced by the stray capacitance of the measurement system,," in 2003 Proc. Int. Conf. Microelectronic Test Structures, pp. 197-202.
    • 2003 Proc. Int. Conf. Microelectronic Test Structures , pp. 197-202
    • Okawa, Y.1    Norimatsu, H.2    Suto, H.3    Takayanagi, M.4
  • 11
    • 0024613393 scopus 로고
    • Series resistance in a MOS capacitor with a thin gate oxide
    • K. Iniewski, A. Balasinski, R. B. Beck, and A. Jakubowski, "Series resistance in a MOS capacitor with a thin gate oxide," Solid State Electron., vol. 32, no. 2, pp. 137-140, 1989.
    • (1989) Solid State Electron. , vol.32 , Issue.2 , pp. 137-140
    • Iniewski, K.1    Balasinski, A.2    Beck, R.B.3    Jakubowski, A.4
  • 13
    • 3943054511 scopus 로고    scopus 로고
    • private communication
    • K. Chabraya, private communication.
    • Chabraya, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.