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Volumn 49, Issue 3 PART 1, 2010, Pages

Metalorganic chemical vapor deposition of Al2O3 thin films from dimethylaluminumhydride and O2

Author keywords

[No Author keywords available]

Indexed keywords

AL2O3 FILMS; HIGH QUALITY; HIGH REFRACTIVE INDEX; HIGH-K GATE DIELECTRICS; INTERFACIAL LAYER; INTERFACIAL-LAYER THICKNESS; KINETIC BEHAVIOR; LANGMUIR HINSHELWOOD MECHANISM; LOW CARBON; LOW DEPOSITION TEMPERATURE; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; OXYGEN PARTIAL PRESSURE; PROCESS OPTIMIZATION; SI SUBSTRATES; SUBSTRATE TEMPERATURE;

EID: 77954004784     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.031502     Document Type: Article
Times cited : (11)

References (34)
  • 29
    • 0003972070 scopus 로고    scopus 로고
    • (Cambridge University Press, Cambridge, U.K.) 7th ed.
    • M. Born and E. Wolf: Principles of Optics (Cambridge University Press, Cambridge, U.K., 1999) 7th ed., p. 89.
    • (1999) Principles of Optics , pp. 89
    • Born, M.1    Wolf, E.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.