Dielectric Evolution Characteristics of HfCN Metal-Electrode-Gated MOS Stacks

Journal of the Electrochemical Society

Volumn 154, Issue 2, 2007, Pages

  Wang, Wenwu ^a   Nabatame, Toshihide ^b   Shimogaki, Yukihiro ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRIC PROPERTIES; ELECTROCHEMICAL ELECTRODES; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SYNTHESIS (CHEMICAL); VOLTAGE MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

DIELECTRIC LAYERS; OXIDE DIELECTRICS; PRECURSORS; THERMAL OXIDES;

MOS DEVICES;

EID: 33846204392     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2401050     Document Type: Article

References (24)

1. B. Doyle, R. Arghavani, D. Barlage, S. Datta, M. Doczy, J. Kavalieros, A. Murthy, and R. Chau, Intel Technol. J., 6, 42 (2002).
2. H. Hu, C. X. Zhu, Y. F. Lu, Y. H. Wu, T. Liew, M. F. Li, B. J. Cho, W. K. Choi, and N. Yakovlev, J. Appl. Phys., 94, 551 (2003).
3. R. B. Fair, IEEE Electron Device Lett., 18, 244 (1997).
4. C. H. Choi, P. R. Chidambaram, and R. Khamankar, IEEE Electron Device Lett., 23, 224 (2002).
5. J. Schaeffer, N. V. Edwards, R. Liu, D. Roan, and R. Gregory, J. Electrochem. Soc., 150, F67 (2003).
6. A. P. Huang and P. K. Chu, J. Appl. Phys., 97, 114106 (2005).
7. F. Chen, X. Bin, C. Hella, X. Shi, W. L. Gladfelter, and S. A. Campbell, Microelectron. Eng., 72, 263 (2004).
8. H. C. Zhong, G. Heuss, and V. Misra, IEEE Electron Device Lett., 21, 593 (2000).
9. M. Moriwaki, T. Yamada, Y. Harada, S. Fujii, M. Yamanaka, J. Shibata, and Y. Mor, Jpn. J. Appl. Phys., Part 1, 39, 2177 (2000).
10. M. S. Akbar, S. Gopalan, H. J. Cho, K. Onishi, R. Choi, R. Nieh, C. S. Kang, Y. H. Kim, J. Han, S. Krishnan, and J. C. Lee, Appl. Phys. Lett., 82, 1757 (2003).
11. B. O. Johansson, H. T. G. Hentzell, J. M. E. Harper, and J. J. Cuomo, J. Mater. Res., 1, 442 (1986).
12. H. Y. Yu, H. F. Lim, J. H. Chen, M. F. Li, C. X. Zhu, C. H. Tung, A. Y. Du, W. D. Wang, D. Z. Chi, and D. L. Kwong, IEEE Electron Device Lett., 24, 230 (2003).
13. H. Y. Yu, M. F. Li, and D. L. Kwong, IEEE Trans. Electron Devices, 51, 609 (2004).
14. W. W. Wang, T. Nabatame, and Y. Shimogaki, Jpn. J. Appl. Phys., Part 2, 43, L1445 (2004).
15. W. W. Wang, T. Nabatame, and Y. Shimogaki, Surf. Sci., 588, 108 (2005).
16. W. W. Wang, T. Nabatame, and Y. Shimogaki, Thin Solid Films, In press.
17. W. W. Wang, T. Nabatame, and Y. Shimogaki, Jpn. J. Appl. Phys., Part 2, 44, L348 (2005).
18. W. W. Wang, T. Nabatame, and Y. Shimogaki, Jpn. J. Appl. Phys., Part 2, 44, L1019 (2005).
19. M. Yamaoka, H. Murakami, and S. Miyazaki, Appl. Surf. Sci., 216, 223 (2003).
20. V. Misra, G. P. Heuss, and H. C. Zhong, Appl. Phys. Lett., 78, 4166 (2001).
21. H. Takeuchi and T.-J. King, Appl. Phys. Lett., 83, 788 (2003).
22. C. T. Larson, E. Gurer, and J. K. Truman, Micro: Defect/Yield Analysis and Metrology, (2005).
23. O. Jintsugawa, M. Sakuraba, T. Matsuura, and J. Murota, Surf. Interface Anal., 34, 456 (2002).
24. M. Yamaoka, A. Ohta, and S. Miyazaki, Extended Abstracts of the 2003 International Conference on Solid State Devices Materials (SSDM), Tokyo, p. 810 (2003).