Elementary surface reaction simulation of aluminum chemical vapor deposition from dimethylaluminumhydride based on Ab Initio Calculations: Theoretical process optimization procedure (2)

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 12 A, 2000, Pages 6501-6512

  Sugiyama, Masakazu ^a   Nakajima, Tohru ^a   Tanaka, Takeo ^a   Itoh, Hitoshi ^b   Aoyama, Jyun Ichi ^b   Egashira, Yasuyuki ^c   Yamashita, Kohichi ^a   Komiyama, Hiroshi ^a   Shimogaki, Yukihiro ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b Semiconductor Academic Research Center (STARC)   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

Ab initio calculation; Aluminum; Chemical vapor deposition; Dimethylaluminumhydride; Elementary reaction simulation; Reaction mechanism; Surface reaction

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; ENTROPY; OPTIMIZATION; REACTION KINETICS;

ELEMENTARY SURFACE REACTION SIMULATION;

ALUMINUM;

EID: 0034470891     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.6501     Document Type: Article

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