Investigation of the effect of high-temperature annealing on stability of ultrathin Al 2O 3 films on Si(001)

Journal of Applied Physics

Volumn 92, Issue 4, 2002, Pages 1914-1921

  Kundu, Manisha ^a   Miyata, Noriyuki ^a   Ichikawa, Masakazu ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AS ANNEALING; ATOMIC SCALE; ATOMIC SCALE ROUGHNESS; FILM QUALITY; FILM STOICHIOMETRY; HIGH OXYGEN PRESSURE; HIGH-TEMPERATURE ANNEALING; HIGH-TEMPERATURE PROCESSING; LOW OXYGEN PRESSURE; NANOMETER-SCALE ROUGHNESS; PROCESSING CONDITION; SI OXIDE; SI SUBSTRATES; SI(0 0 1); SI(001) SURFACES; UHV ANNEALING; ULTRA-THIN;

ALUMINUM; ANNEALING; ATOMS; OXIDE FILMS; OXYGEN; SILICON; STOICHIOMETRY; ULTRATHIN FILMS;

INTERFACES (MATERIALS);

EID: 0037103573     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1495066     Document Type: Article

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