Luminescence decay in highly excited GaN grown by hydride vapor-phase epitaxy

Applied Physics Letters

Volumn 83, Issue 1, 2003, Pages 66-68

  Jursenas S ^a   Miasojedovas, S ^a   Kurilcik G ^a   Zukauskas A ^a   Hageman, P R ^b  

^a VILNIUS UNIVERSITY   (Lithuania)

^b RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE;

PHOTOEXCITATION;

GALLIUM NITRIDE;

EID: 4344659596     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1590736     Document Type: Article

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