Valence subband structures of (1010)-GaN/AlGaN strained quantum wells calculated by the tight-binding method

Applied Physics Letters

Volumn 70, Issue 16, 1997, Pages 2159-2161

  Niwa, Atsuko ^a   Ohtoshi, Tsukuru ^a   Kuroda, Takao ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000033216     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118950     Document Type: Article

References (17)

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