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Applied Physics Letters

Volumn 95, Issue 20, 2009, Pages

On carrier spillover in c- and m-plane InGaN light emitting diodes

(8) Lee, J a Li, X a Ni, X a Ozgur U a Morko H a Paskova, T b Mulholland, G b Evans, K R b

a Virginia Commonwealth University (United States)

b KYMA TECHNOLOGIES INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENCY DEGRADATION; ELECTRON BLOCKING LAYER; EXCITATION CONDITIONS; EXCITATION POWER; EXTERNAL QUANTUM EFFICIENCY; HIGH INJECTION; INDUCED FIELD; INTERNAL QUANTUM EFFICIENCY; LED STRUCTURE; M-PLANE; MAXIMUM CURRENT DENSITY; OPTICAL MATRIX ELEMENT; POLARIZATION CHARGES;

DEGRADATION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; POLARIZATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM EFFICIENCY;

EID: 70450270820 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3266833 Document Type: Article

Times cited : (49)

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