Advanced amorphous silicon thin-film transistors for AM-OLEDs: Electrical performance and stability

IEEE Transactions on Electron Devices

Volumn 55, Issue 7, 2008, Pages 1621-1629

  Kuo, Alex ^a   Won, Tae Kyung ^b   Kanicki, Jerzy ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b AKT   (United States)

Author keywords

Advanced amorphous silicon thin film transistor a Si:H TFT); Bias temperature stress (BTS), biasing condition; Circuit stability; Current temperature stress (CTS)

Indexed keywords

AMORPHOUS FILMS; DIELECTRIC FILMS; GATE DIELECTRICS; GATES (TRANSISTOR); OPTICAL DESIGN; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON; SYSTEM STABILITY; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

(+ MOD 2N) OPERATION; (I ,J) CONDITIONS; AND GATES; BI-LAYER STRUCTURES; CHANNEL CURRENTS; ELECTRICAL FIELDS; ELECTRICAL PERFORMANCES; ELECTRICAL STABILITY; GATE INSULATORS; HIGH TEMPERATURE STABILITY; SATURATION REGION; SILICON THIN FILMS; THIN FILM TRANSISTOR (TFT);

AMORPHOUS SILICON;

EID: 46649102650     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.924047     Document Type: Article

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