Current-scaling a-Si:H TFT pixel-electrode circuit for AM-OLEDs: Electrical properties and stability

IEEE Transactions on Electron Devices

Volumn 54, Issue 9, 2007, Pages 2403-2410

  Lee, Hojin ^a   Lin, Yen Chung ^b   Shieh, Han Ping D ^b   Kanicki, Jerzy ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Active matrix organic light emitting display (AM OLED); Current program; Current scaling; Hydrogenate amorphous silicon (a Si:H); Pixel electrode circuit; Thin film transistor (TFT)

Indexed keywords

AMORPHOUS SILICON; ELECTRIC PROPERTIES; ORGANIC LIGHT EMITTING DIODES (OLED); THERMODYNAMIC STABILITY;

CURRENT SCALING; PIXEL-ELECTRODE CIRCUIT;

THIN FILM TRANSISTORS;

EID: 41749115191     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.902665     Document Type: Article

References (17)

1. Y. He, R. Hattori, and J. Kanicki, "Improved a-Si:H TFT pixel electrode circuits for active-matrix organic light emitting displays," IEEE Trans. Electron Devices, vol. 48, no. 7, pp. 1322-1325, Jul. 2001.
2. T. V. de Biggelaar, I. Camps, M. Childs, M. Fleuster, A. Giraldo, S. Godfrey, I. M. Hunter, M. T. Johnson, H. Lifka, R. Los, A. Sempel, J. M. Shannon, M. J. Trainor, R. W. Wilks, and N. D. Young, "Passive and active matrix addressed polymer light emitting diode displays," Proc. SPIE, vol. 4295, pp. 134-146, 2001.
3. J. Kim, Y. Hong, and J. Kanicki, "Amorphous silicon TFT-based active-matrix organic polymer LEDs," IEEE Electron Device Lett., vol. 24, no. 7, pp. 451-453, Jul. 2003.
4. Y. Hong, J. Y. Nam, and J. Kanicki, "100 dpi 4-a-Si:H TFTs active-matrix organic polymer light-emitting display," IEEE J. Sel. Topics Quantum Electron., vol. 10, no. 1, pp. 16-25, Jan./Feb. 2004.
5. S. J. Ashtiani, P. Servati, D. Striakhilev, and A. Nathan, "A 3-TFT current-programmed pixel circuit for AMOLEDs," IEEE Trans. Electron Devices, vol. 52, no. 7, pp. 1514-1518, Jul. 2005.
6. Y. C. Lin, H. P. D. Shieh, and J. Kanicki, "A novel current-scaling a-Si:H TFTs pixel electrode circuit for AM-OLEDs," IEEE Trans. Electron Devices, vol. 52, no. 6,pp. 1123-1131, Jun. 2005.
7. A. Yumoto, M. Asano, H. Hasegawa, and M. Sekiya, "Pixel-driving methods for large-sized poly-si AM-OLED displays," in Proc. Int. Display Workshop, 2001, pp. 1395-1398.
8. J. Lee, W. Nam, S. Jung, and M. Han, "A new current scaling pixel circuit for AMOLED," IEEE Electron Device Lett., vol. 25, no. 5, pp. 280-282, May 2004.
9. J. Lee, W. Nam, S. Han, and M. Han, "OLED pixel design employing a novel current scaling scheme," in Proc. SID Dig., 2003, pp. 490-493.
10. K. Sakariya, P. Servati, and A. Nathan, "Stability analysis of current programmed a-Si:H AM-OLED pixel circuits," IEEE Trans. Electron Devices, vol. 51, no. 12, pp. 2019-2025, Dec. 2004.
11. Y. C. Lin, H. D. Shieh, C. C. Su, H. Lee, and J. Kanicki, "A novel current-scaling a-Si:H TFTs pixel electrode circuit for active matrix organic light-emitting displays," in Proc. SID Dig., 2005, pp. 846-848.
12. J. H. Lan and J. Kanicki, "Planarized copper gate hydrogenated amorphous-silicon thin-film transistors for AM-LCD's," IEEE Electron Device Lett., vol. 20, no. 3, pp. 129-131, Mar. 1999.
13. J. H. Lan and J. Kanicki, "Planarization technology of a-Si:H TFTs for AM-LCDs," Proc. SPIE, vol. 3421, pp. 170-182, 1988.
14. J. H. Lan, J. Kanicki, A. Catalano, J. Keane, W. den Boer, and T. Fu, "Patterning of transparent conducting oxide thin films by wet etching for a-Si:H TFT LCDs," J. Electron. Mater., vol. 25, no. 12, pp. 1806-1817, Dec. 1996.
15. Y. P. Tsividis, Operation and Modeling of the MOS Transistor. New York: McGraw-Hill, 1987.
16. F. R. Libsch and J. Kanicki, "Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors," Appl. Phys. Lett., vol. 62, no. 11, pp. 1286-1288, Mar. 1993.
17. H. Lee, J. S. Yoo, C.-D. Kim, I.-J. Chung, and J. Kanicki, "Asymmetric electrical properties of corbino a-Si:H TFTs and concepts of their applications to flat panel displays," IEEE Trans. Electron Devices vol. 54, no. 4, pp. 654-662, 2007.