Al-Zn-Sn-O thin film transistors with top and bottom gate structure for AMOLED

IEICE Transactions on Electronics

Volumn E92-C, Issue 11, 2009, Pages 1340-1346

  Cho, Doo Hee ^a   Park, Sang Hee Ko ^a   Yang, Shinhyuk ^a   Byun, Chunwon ^a   Ryu, Min Ki ^a   Lee, Jeong Ik ^a   Hwang, Chi Sun ^a   Yoon, Sung Min ^a   Chu, Hye Yong ^a   Cho, Kyoung Ik ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

AMOLED; Oxide; Thin film transistor; Transparent

Indexed keywords

ALUMINUM; ANNEALING; FIELD EFFECT TRANSISTORS; MAGNETRON SPUTTERING; ORGANIC LIGHT EMITTING DIODES (OLED); OXIDES; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM CIRCUITS; THIN FILMS; TIN; ZINC;

AM-OLED; ELECTRICAL PERFORMANCE; FIELD-EFFECT MOBILITIES; OXIDE MATERIALS; RF-MAGNETRON SPUTTERING; SUBTHRESHOLD SWING; TRANSPARENT; TURN-ON VOLTAGES;

THIN FILM TRANSISTORS;

EID: 77950481302     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1587/transele.E92.C.1340     Document Type: Article

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