Dynamic bias temperature instability-like behaviors under Fowler-Nordheim program/erase stress in nanoscale silicon-oxide-nitride-oxide-silicon memories

Applied Physics Letters

Volumn 92, Issue 13, 2008, Pages

  Seo, Seung Hwan ^a   Kang, Gu Cheol ^a   Roh, Kang Seob ^a   Kim, Kwan Young ^a   Lee, Sunyeong ^a   Song, Kwan Jae ^a   Choi, Chang Min ^a   Park, So Ra ^a   Jeon, Kichan ^a   Park, Jun Hyun ^a   Park, Byung Gook ^b   Lee, Jong Duk ^b   Kim, Dong Myong ^a   Kim, Dae Hwan ^a  

^a Kookmin University   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HYSTERESIS; STRESS MEASUREMENT; TEMPERATURE CONTROL;

DYNAMIC BIAS TEMPERATURE; FOWLER-NORDHEIM PROGRAM; HOLE INJECTION;

SILICON COMPOUNDS;

EID: 41649113126     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2905272     Document Type: Article

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