Nonvolatile memory using Al 2O 3 film with an embedded Al-rich layer

Applied Physics Letters

Volumn 87, Issue 22, 2005, Pages 1-3

  Nakata, Shunji ^a   Saito, Kunio ^a   Shimada, Masaru ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE CHARACTERISTICS; ELECTRON-CYCLOTRON-RESONANCE SPUTTERING; GAS FLOW RATE; GAUSSIAN DISTRIBUTION;

ELECTRON CYCLOTRON RESONANCE; HYSTERESIS; NANOSTRUCTURED MATERIALS; SPUTTERING; STATISTICAL METHODS; STOICHIOMETRY; THIN FILMS; THRESHOLD VOLTAGE;

NONVOLATILE STORAGE;

EID: 27944489517     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2137449     Document Type: Article

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