Influence of bulk bias on negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin SiON gate dielectrics

Journal of Applied Physics

Volumn 99, Issue 6, 2006, Pages

  Zhu, Shiyang ^a   Nakajima, Anri ^a   Ohashi, Takuo ^b   Miyake, Hideharu ^b  

^a HIROSHIMA UNIVERSITY   (Japan)

^b Elpida Memory Inc   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRODES; ELECTRON TRANSITIONS; SILICON COMPOUNDS; ULTRATHIN FILMS;

BULK ELECTRODE FLOATING; GATE VOLTAGE (VG); NEGATIVE BIAS TEMPERATURE; SION GATE DIELECTRICS;

MOSFET DEVICES;

EID: 33645670824     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2183409     Document Type: Article

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