Effect of hydrogen passivation on polycrystalline silicon thin films

Thin Solid Films

Volumn 487, Issue 1-2, 2005, Pages 152-156

  Honda, S ^a   Mates, T ^a   Ledinsky, M ^a   Oswald, J ^a   Fejfar, A ^a   Kocka J ^a   Yamazaki, T ^b   Uraoka, Y ^b   Fuyuki, T ^b  

^a INSTITUTE OF PHYSICS   (Czech Republic)

^b NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Hydrogen molecules; Hydrogen passivation; Photoluminescence; Polycrystalline silicon; Raman spectroscopy; Si H2 bonding

Indexed keywords

ATOMIC FORCE MICROSCOPY; GRAIN BOUNDARIES; HALL EFFECT; HYDROGEN; HYDROGEN BONDS; HYDROGENATION; PHOTOLUMINESCENCE; PHYSICAL VAPOR DEPOSITION; POLYSILICON; RAMAN SPECTROSCOPY; THIN FILMS;

HYDROGEN MOLECULES; HYDROGEN PASSIVATION; PLASMA HYDROGENATION; SI-H2 BONDING;

PASSIVATION;

EID: 22944464062     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.01.056     Document Type: Conference Paper

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