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Volumn 518, Issue 15, 2010, Pages 4417-4424

Studies on In-pWSe2 Schottky diode by current-voltage-temperature method

Author keywords

Current Voltage measurements; In pWSe2; Metal semiconductor contacts; Schottky diodes; Thermionic emission; Tunneling

Indexed keywords

AS-GROWN; BARRIER HEIGHTS; CURRENT VOLTAGE; CURRENT-VOLTAGE MEASUREMENTS; GAUSSIAN DISTRIBUTION MODEL; GENERATION RECOMBINATION; IDEALITY FACTORS; METAL-SEMICONDUCTOR CONTACTS; MULTIPLE CHARGE; RICHARDSON PLOT; SCHOTTKY DIODES; THERMIONIC EMISSION THEORY; TOTAL CURRENT;

EID: 77953131345     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.01.027     Document Type: Article
Times cited : (10)

References (59)
  • 4
    • 0006040845 scopus 로고
    • Jasprit S. (Ed), McGraw-Hill, New York
    • In: Jasprit S. (Ed). Semiconductor Devices (1984), McGraw-Hill, New York
    • (1984) Semiconductor Devices


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.