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Volumn 79, Issue 10, 1996, Pages 7820-7829

Inhomogeneous Schottky barriers at Ag/Si(111) and Ag/Si(100) interfaces

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000182815     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362390     Document Type: Article
Times cited : (50)

References (60)
  • 12
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    • unpublished
    • J. P. Sullivan, R. T. Tung, D. J. Eaglesham, F. Schrey, and W. R. Graham, J. Vac. Sci. Teehnol. B 11, 1564 (1993); J. P. Sullivan (unpublished).
    • Sullivan, J.P.1
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    • L. S. O. Johansson, E. Landemark, C. J. Karlsson, and R. I. G. Uhrberg, Phys. Rev. Lett. 69, 2451 (1992); Y. G. Ding, C. T. Chan, and K. M. Ho, ibid. 69, 2452 (1992).
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    • Ding, Y.G.1    Chan, C.T.2    Ho, K.M.3
  • 45
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    • It has been a common practice to plot the SBH of a metal-semiconductor contact vs the electronegativity of the metal to discuss possible correlations or chemical trends in SB formation; see, for example, W. Mönch, Phys. Rev. Lett. 58, 1260 (1987).
    • (1987) Phys. Rev. Lett. , vol.58 , pp. 1260
    • Mönch, W.1
  • 49
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    • G. Le Lay and K. Hricovini, Phys. Rev. Lett. 65, 807 (1990); H. H. Weitering, D. R. Heslinga, T. Hibma, and T. M. Klapwijk, ibid. 65, 808 (1990).
    • (1990) Phys. Rev. Lett. , vol.65 , pp. 807
    • Le Lay, G.1    Hricovini, K.2
  • 53
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    • K. Markert, P. Pervan, W. Heichler, and K. Wandelt, J. Vac. Sci. Technol. A 7, 2873 (1989); in this article, the SBH was determined by measuring the photovoltage-induced shift of the valence-band photoemission spectra at low temperature.
    • (1989) J. Vac. Sci. Technol. A , vol.7 , pp. 2873
    • Markert, K.1    Pervan, P.2    Heichler, W.3    Wandelt, K.4
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    • note
    • p,HD.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.