Temperature dependence of current-voltage characteristics of Sn/p-GaTe Schottky diodes

Applied Surface Science

Volumn 211, Issue 1-4, 2003, Pages 360-366

  Coskun, Cevdet ^a   Biber, Mehmet ^a   Efeoglu, Hasan ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

GaTe; Gaussian distribution; I V T; Schottky barrier

Indexed keywords

CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS; THERMIONIC EMISSION; TIN;

GAUSSIAN DISTRIBUTION;

SCHOTTKY BARRIER DIODES;

EID: 0037657439     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00267-8     Document Type: Article

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