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Journal of Applied Physics

Volumn 107, Issue 10, 2010, Pages

Control of asymmetric strain relaxation in InGaAs grown by molecular-beam epitaxy

(4) France, R a Ptak, A J a Jiang, C S a Ahrenkiel, S P b

a NATIONAL RENEWABLE ENERGY LABORATORY (United States)

b United States (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION FORMATION; GAAS; IN-SITU; LASER ARRAYS; MISFIT DISLOCATION DENSITIES; MISFIT DISLOCATIONS; MULTIBEAM OPTICAL STRESS SENSORS; REAL TIME; RELATIVE CONTRIBUTION; RELAXATION ANALYSIS; RELAXATION RATES; TRANSMISSION ELECTRON MICROSCOPY IMAGES; TWO PHASIS; V/III RATIO;

CRYSTAL GROWTH; HETEROJUNCTIONS; LANTHANUM COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM; STRAIN CONTROL; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

STRAIN RELAXATION;

EID: 77953009043 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3361533 Document Type: Article

Times cited : (16)

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