Mobile dislocation density and strain relaxation rate evolution during in xGa 1-xAs/GaAs heteroepitaxy

Journal of Applied Physics

Volumn 100, Issue 1, 2006, Pages

  Lynch, C ^a   Chason, E ^a   Beresford, R ^a  

^a Brown University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITY; HETEROEPITAXY; RELAXATION RATE; STRAIN RELAXATION;

DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; STRAIN; TEMPERATURE DISTRIBUTION; THICKNESS CONTROL;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33746191700     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2206125     Document Type: Article

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