Misfit strain anisotropy in partially relaxed lattice-mismatched InGaAs/GaAs heterostructures

Journal of Physics Condensed Matter

Volumn 16, Issue 2, 2004, Pages

  Yastrubchak, O ^a   Wosinski T ^a   Domagala J Z ^a   Lusakowska E ^a   Figielski, T ^a   Pecz B ^b   Toth A L ^b  

^a INSTITUTE OF PHYSICS   (Poland)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CORRELATION METHODS; CRYSTAL IMPURITIES; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); ELECTRON BEAMS; ENERGY DISPERSIVE SPECTROSCOPY; INTERFACES (MATERIALS); MORPHOLOGY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SPECTROMETRY; STRAIN; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL LAYERS; HETEROEPITAXIAL SYSTEMS;

HETEROJUNCTIONS;

EID: 0442326588     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/2/001     Document Type: Conference Paper

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