|
Volumn 310, Issue 12, 2008, Pages 3014-3018
|
Anisotropic misfit strain relaxation in lattice mismatched InGaAs/GaAs heterostructures grown by MOVPE
|
Author keywords
A1. High resolution X ray diffraction; A1. Line defects; A1. Stresses; A3. Metalorganic vapour phase epitaxy; B2. Semiconducting III V materials
|
Indexed keywords
DISLOCATIONS (CRYSTALS);
METALLORGANIC VAPOR PHASE EPITAXY;
POINT DEFECTS;
STRAIN RELAXATION;
STRESSES;
TRANSMISSION ELECTRON MICROSCOPY;
ANISOTROPIC-STRAIN RELAXATION;
CRYSTALLOGRAPHIC DIRECTIONS;
LINE DEFECTS;
HETEROJUNCTIONS;
|
EID: 44149120927
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.03.003 Document Type: Article |
Times cited : (19)
|
References (17)
|