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Volumn 310, Issue 12, 2008, Pages 3014-3018

Anisotropic misfit strain relaxation in lattice mismatched InGaAs/GaAs heterostructures grown by MOVPE

Author keywords

A1. High resolution X ray diffraction; A1. Line defects; A1. Stresses; A3. Metalorganic vapour phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

DISLOCATIONS (CRYSTALS); METALLORGANIC VAPOR PHASE EPITAXY; POINT DEFECTS; STRAIN RELAXATION; STRESSES; TRANSMISSION ELECTRON MICROSCOPY;

EID: 44149120927     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.03.003     Document Type: Article
Times cited : (19)

References (17)
  • 15
    • 0345221574 scopus 로고
    • Measurement of relaxation in strained layer semiconductor structures
    • Barrett C.S., et al. (Ed), Plenum, New York
    • Halliwell M.A.G. Measurement of relaxation in strained layer semiconductor structures. In: Barrett C.S., et al. (Ed). Advances in X-ray Analysis vol. 33 (1990), Plenum, New York 61
    • (1990) Advances in X-ray Analysis , vol.33 , pp. 61
    • Halliwell, M.A.G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.