Metamorphic InGaAs quantum well laser diodes at 1.5μm on GaAs grown by molecular beam epitaxy

Chinese Physics Letters

Volumn 26, Issue 1, 2009, Pages

  Wang, Hai Li ^a   Wu, Dong Hai ^a   Wu, Bing Peng ^a   Ni, Hqiao Qiao ^a   Huang, She Song ^a   Xiong, Yong Hua ^a   Wang, Peng Fei ^a   Han, Qin ^a   Niu, Zhi Chuan ^a   Tngring, I ^b   Wang, S M ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MOLECULAR BEAMS; QUANTUM WELL LASERS; RIDGE WAVEGUIDES; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS;

1.5 ΜM; GAAS QUANTUM WELLS; INGAAS QUANTUM WELLS; INGAAS/GAAS; LASING WAVELENGTH; METAMORPHIC BUFFERS; MOLECULAR-BEAM EPITAXY; QUANTUM WELL LASER DIODES; RIDGE-WAVEGUIDE LASERS; THRESHOLD-CURRENT DENSITY;

MOLECULAR BEAM EPITAXY;

EID: 66149106707     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/26/1/014214     Document Type: Article

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