The role of morphology in the relaxation of strain in InGaAs/GaAs

Journal of Crystal Growth

Volumn 264, Issue 1-3, 2004, Pages 64-69

  Perez Rodriguez B ^a   Mirecki Millunchick, J ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

A1. Atomic force microscopy; A1. Stresses; A1. X ray diffraction; A3. Molecular beam epitaxy

Indexed keywords

COALESCENCE; COMPUTER SIMULATION; DATA REDUCTION; DEPOSITION; DISLOCATIONS (CRYSTALS); ELECTRON DIFFRACTION; GALLIUM ALLOYS; HETEROJUNCTIONS; INDIUM ALLOYS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; OPTICAL SENSORS; STRESS RELAXATION; THICKNESS MEASUREMENT; X RAY DIFFRACTION;

CRYSTAL DIFFRACTOMETERS; HETEROEPITAXY; STRAIN RELAXATION;

CRYSTAL GROWTH;

EID: 1342306681     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.12.053     Document Type: Article

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