Dislocation structure and relaxation kinetics in InGaAs/GaAs heteroepitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 3, 2002, Pages 1247-1250

  Lynch, C ^a   Chason, E ^a   Beresford, R ^a   Chen, E B ^a   Paine, D C ^a  

^a Brown University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); FILM GROWTH; KINETIC THEORY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN; STRESS RELAXATION; TRANSMISSION ELECTRON MICROSCOPY;

HETEROEPITAXY;

THIN FILMS;

EID: 0035998561     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1463722     Document Type: Conference Paper

References (9)